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| BUZ111S SPP80N05 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 80 A RDS(on) 0.008 Package Ordering Code BUZ111S TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 100 C ID A 80 Pulsed drain current TC = 25 C IDpuls 320 E AS Avalanche energy, single pulse ID = 80 A, V DD = 25 V, RGS = 25 L = 220 H, Tj = 25 C mJ 700 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 80 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 80 25 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 20 250 V W Semiconductor Group 1 28/Jan/1998 BUZ111S SPP80N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 0.6 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 240 A V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 80 A 0.0065 0.008 Semiconductor Group 2 28/Jan/1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 80 A gfs S 30 pF 3600 4500 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 1100 1375 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 550 690 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 tr 25 37 Rise time V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 td(off) 30 45 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 tf 65 95 Fall time V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 Qg(th) 40 60 nC Gate charge at threshold V DD = 40 V, ID 0.1 A, V GS =0 to 1 V Qg(7) 3.3 5 Gate charge at 7.0 V V DD = 40 V, ID = 80 A, VGS =0 to 7 V Qg(total) 95 140 Gate charge total V DD = 40 V, ID = 80 A, VGS =0 to 10 V V (plateau) 125 185 V Gate plateau voltage V DD = 40 V, ID = 80 A Semiconductor Group 3 5.45 28/Jan/1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 80 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 320 V Inverse diode forward voltage V GS = 0 V, IF = 160 A trr 1.25 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 105 160 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.29 0.45 Semiconductor Group 4 28/Jan/1998 BUZ111S SPP80N05 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 90 A 260 W 220 Ptot 200 180 160 140 120 100 80 60 40 ID 70 60 50 40 30 20 10 20 0 0 20 40 60 80 100 120 140 C 180 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 3 /I D Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W t = 29.0s p = A ID 10 2 V DS R DS (o n) ZthJC 100 s 10 -1 10 -2 D = 0.50 1 ms 10 -3 0.20 0.10 10 1 10 ms 0.05 10 -4 single pulse 0.02 0.01 DC 10 0 0 10 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 28/Jan/1998 BUZ111S SPP80N05 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 180 A ID 140 e Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.026 Ptot = 250W l i kj h g f VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.022 RDS (on) 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 V 5.0 0 a b c d e 120 100 d c d e f g h i 80 60 40 b c f g h i j k VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 k h i j 8.0 9.0 10.0 20.0 j k l 20 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 40 60 80 100 120 140 A 180 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 28/Jan/1998 BUZ111S SPP80N05 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 80 A, VGS = 10 V 0.026 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =240A 5.0 V 4.4 VGS(th) 0.022 RDS (on) 0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -60 -20 20 60 100 C 180 98% typ 4.0 3.6 3.2 2.8 2.4 2.0 1.6 typ max 1.2 0.8 0.4 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 nF C Ciss A IF 10 0 Coss 10 2 Crss 10 -1 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 28/Jan/1998 BUZ111S SPP80N05 Avalanche energy EAS = (Tj) parameter: ID = 80 A, VDD = 25 V RGS = 25 , L = 220 H 750 mJ 650 EAS 600 550 500 450 400 350 300 250 200 150 100 50 0 20 40 60 80 100 120 140 C 180 Typ. gate charge VGS = (QGate) parameter: ID puls = 80 A 16 V VGS 12 10 0,2 VDS max 8 0,8 VDS max 6 4 2 0 0 20 40 60 80 100 120 140 nC 170 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 28/Jan/1998 |
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